TTD1410B Specs and Replacement

Type Designator: TTD1410B

SMD Transistor Code: D1410B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO220SIS

 TTD1410B Substitution

- BJT ⓘ Cross-Reference Search

 

TTD1410B datasheet

 ..1. Size:152K  toshiba

 ttd1410b.pdf pdf_icon

TTD1410B

TTD1410B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1410B TTD1410B TTD1410B TTD1410B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 2 V , IC = 2 A) 3. Packaging and Internal Circuit 3. Packaging and Internal Circuit 3. Packa... See More ⇒

 8.1. Size:181K  toshiba

 ttd1415b.pdf pdf_icon

TTD1410B

TTD1415B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B TTD1415B TTD1415B 1. Applications 1. Applications 1. Applications 1. Applications High-Power Switching Hammer Drivers 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage VCE(sat) = 1.5 ... See More ⇒

 8.2. Size:222K  inchange semiconductor

 ttd1415b.pdf pdf_icon

TTD1410B

isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 3A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Complement to Type TTB1020B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed switc... See More ⇒

 9.1. Size:172K  toshiba

 ttd1409b.pdf pdf_icon

TTD1410B

TTD1409B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1409B TTD1409B TTD1409B TTD1409B 1. Applications 1. Applications 1. Applications 1. Applications High-Voltage Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 600 (min) (VCE = 2 V , IC = 2 A) (2) Monolithic construction with built-in base-emitter shunt resistor 3. Packa... See More ⇒

SHOW MORE

Detailed specifications: TTC011B, TTC014, TTC015B, TTC016, TTC017, TTC3710B, TTC5460B, TTD1409B, 2N4401, TTD1415B, TTD1509B, TFM1759, TFN1036, TFN1037, TFN1386L, TFN1424, TFN1514

Keywords - TTD1410B pdf specs

 TTD1410B cross reference

 TTD1410B equivalent finder

 TTD1410B pdf lookup

 TTD1410B substitution

 TTD1410B replacement