TG50 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TG50

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.175 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.5 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO18

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TG50 datasheet

 ..1. Size:235K  no
 tg50 tg51 tg52 tg53 tg55.pdf pdf_icon

TG50

 0.1. Size:174K  onsemi
 ngtg50n60fwg.pdf pdf_icon

TG50

 0.2. Size:169K  onsemi
 ngtg50n60flwg.pdf pdf_icon

TG50

NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 0.3. Size:136K  powersem
 pstg50hst12.pdf pdf_icon

TG50

ECO-PACTM 1 Powerline N-Channel PSTG 50HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 72 A IC75 = 50 A ICM = 150 A Preliminary Data Sheet tSC = 10 s I N H M B G A Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB

MOSTRAR MÁS

Otros transistores... TS13009CZ, TFN5177, TFN807, TFN817, TFN847, TFNA06, TFNA14, TFNH10, 13007, TG51, TG52, TG53, TG55, TH430, TH513, TH560, TH562