TG50 Specs and Replacement
Type Designator: TG50
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO18
TG50 Substitution
- BJT ⓘ Cross-Reference Search
TG50 datasheet
NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System... See More ⇒
ECO-PACTM 1 Powerline N-Channel PSTG 50HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 72 A IC75 = 50 A ICM = 150 A Preliminary Data Sheet tSC = 10 s I N H M B G A Features Symbol Test Conditions Maximum Ratings TVJ = 25 C to 150 C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB ... See More ⇒
Detailed specifications: TS13009CZ, TFN5177, TFN807, TFN817, TFN847, TFNA06, TFNA14, TFNH10, 13007, TG51, TG52, TG53, TG55, TH430, TH513, TH560, TH562
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