TG50 Datasheet, Equivalent, Cross Reference Search
Type Designator: TG50
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
TG50 Transistor Equivalent Substitute - Cross-Reference Search
TG50 Datasheet (PDF)
ngtg50n60fwg.pdf
NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V
ngtg50n60flwg.pdf
NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System
pstg50hst12.pdf
ECO-PACTM 1 Powerline N-Channel PSTG 50HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 72 A IC75 = 50 A ICM = 150 A Preliminary Data Sheet tSC = 10 s I NHMB GAFeatures Symbol Test Conditions Maximum Ratings TVJ = 25C to 150C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
