TG50 Datasheet and Replacement
Type Designator: TG50
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.175 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
TG50 Substitution
TG50 Datasheet (PDF)
ngtg50n60fwg.pdf

NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V
ngtg50n60flwg.pdf

NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System
pstg50hst12.pdf

ECO-PACTM 1 Powerline N-Channel PSTG 50HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 72 A IC75 = 50 A ICM = 150 A Preliminary Data Sheet tSC = 10 s I NHMB GAFeatures Symbol Test Conditions Maximum Ratings TVJ = 25C to 150C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB
Datasheet: TS13009CZ , TFN5177 , TFN807 , TFN817 , TFN847 , TFNA06 , TFNA14 , TFNH10 , 2N3906 , TG51 , TG52 , TG53 , TG55 , TH430 , TH513 , TH560 , TH562 .
History: BDT30C | BCR158 | 563BSY | 3DD31C | SMBTA55 | BLW66 | 2SC1956
Keywords - TG50 transistor datasheet
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History: BDT30C | BCR158 | 563BSY | 3DD31C | SMBTA55 | BLW66 | 2SC1956



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