All Transistors. TG50 Datasheet

 

TG50 Datasheet and Replacement


   Type Designator: TG50
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.175 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 75 °C
   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO18
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TG50 Datasheet (PDF)

 ..1. Size:235K  no
 tg50 tg51 tg52 tg53 tg55.pdf pdf_icon

TG50

 0.1. Size:174K  onsemi
 ngtg50n60fwg.pdf pdf_icon

TG50

NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V

 0.2. Size:169K  onsemi
 ngtg50n60flwg.pdf pdf_icon

TG50

NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 0.3. Size:136K  powersem
 pstg50hst12.pdf pdf_icon

TG50

ECO-PACTM 1 Powerline N-Channel PSTG 50HST12 Trench Gate- VCES = 1200 V IGBT Module VCE(sat) = 1.9 V IC25 = 72 A IC75 = 50 A ICM = 150 A Preliminary Data Sheet tSC = 10 s I NHMB GAFeatures Symbol Test Conditions Maximum Ratings TVJ = 25C to 150C 1200 V VCES Package with DCB ceramic base continous V VGES 20 plate and soldering pins for PCB

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History: 2SC3489 | HEPS0040 | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | 3DF1C

Keywords - TG50 transistor datasheet

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