2N675
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N675
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 75
V
Tensión colector-emisor (Vce): 75
V
Tensión emisor-base (Veb): 70
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 140
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.4
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO31
Búsqueda de reemplazo de transistor bipolar 2N675
2N675
Datasheet (PDF)
0.1. Size:147K international rectifier
2n6756 irf130.pdf 
PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process
0.2. Size:147K international rectifier
2n6758 irf230.pdf
PD - 90334F IRF230REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758HEXFETTRANSISTORS JANTXV2N6758THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF230 200V 0.40 9.0ATO-3The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique
0.6. Size:11K semelab
2n6753.pdf
2N6753Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 500V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.7. Size:12K semelab
2n6751.pdf
2N6751Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.8. Size:11K semelab
2n6754.pdf
2N6754Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 500V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
0.9. Size:130K inchange semiconductor
2n6753 2n6754.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3
0.10. Size:130K inchange semiconductor
2n6751 2n6752.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3
Otros transistores... 2N6734
, 2N6735
, 2N6736
, 2N6737
, 2N6738
, 2N6739
, 2N674
, 2N6740
, TIP41C
, 2N6751
, 2N6752
, 2N6753
, 2N6754
, 2N676
, 2N677
, 2N6771
, 2N6772
.
