2N675 Specs and Replacement
Type Designator: 2N675
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 75 V
Maximum Emitter-Base Voltage |Veb|: 70 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO31
- BJT ⓘ Cross-Reference Search
2N675 datasheet
0.1. Size:147K international rectifier
2n6756 irf130.pdf 

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process... See More ⇒
0.2. Size:147K international rectifier
2n6758 irf230.pdf 

PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒
0.6. Size:11K semelab
2n6753.pdf 

2N6753 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
0.7. Size:12K semelab
2n6751.pdf 

2N6751 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
0.8. Size:11K semelab
2n6754.pdf 

2N6754 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 500V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒
0.9. Size:130K inchange semiconductor
2n6753 2n6754.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 ... See More ⇒
0.10. Size:130K inchange semiconductor
2n6751 2n6752.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 ... See More ⇒
Detailed specifications: 2N6734, 2N6735, 2N6736, 2N6737, 2N6738, 2N6739, 2N674, 2N6740, BC547, 2N6751, 2N6752, 2N6753, 2N6754, 2N676, 2N677, 2N6771, 2N6772
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