TK3904NND03
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK3904NND03
Código: 1N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300
MHz
Capacitancia de salida (Cc): 4
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: WBFBP-03B
Búsqueda de reemplazo de transistor bipolar TK3904NND03
TK3904NND03
Datasheet (PDF)
..1. Size:297K jiangsu
tk3904nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3904NND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor B E FEATURES C 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary PNP Type Available (TK3906NND03) BACK Ultra-Small Surface Mount Pack
8.1. Size:512K jiangsu
tk3904led03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03E Plastic-Encapsulate Transistors TK3904LED03 TRANSISTORNPN WBFBP-03E DESCRIPTION NPN single switching transistor ultra small SMD plastic package FEATURE1. BASE Complementary to TK3906LED03 2. EMITTER Single General-Purpose Switching Transistor 3. COLLECTORAPPLICATION General-Purpose Switching and Ampl
8.2. Size:91K jiangsu
tk3904lld03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D (1.01.00.5) TOP unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor B E FEATURES C 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary PNP Type Available (TK3906LLD03) BACK Ultra-Small Surface Mount Pack
9.1. Size:93K jiangsu
tk3906lld03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D (1.01.00.5) TOP unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor B E C FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available (TK3904LLD03) BACK 3. COLLECTOR Ultra-Small Surf
9.2. Size:370K jiangsu
tk3906nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor B E C FEATURES 1. BASE Epitaxial Planar Die Construction 2. EMITTER Complementary NPN Type Available (TK3904NND03) BACK 3. COLLECTOR Ultra-Small Surf
Otros transistores... 2N3200
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.