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TSC148DCM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSC148DCM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO263

 Búsqueda de reemplazo de transistor bipolar TSC148DCM

 

TSC148DCM Datasheet (PDF)

 7.1. Size:204K  taiwansemi
tsc148d.pdf

TSC148DCM
TSC148DCM

TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base 400V BVCEO 2. Collector 3. Emitter 700V BVCBO 8A IC 1.5V @ IC / IB = 5A / 1A VCE(SAT) Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Becaus

 9.1. Size:112K  jiangsu
tsc1417.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 TSC1417 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-B

 9.2. Size:274K  jiangsu
tsc144ennd03.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC144ENND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit2. GND without connecting external input resistors (see equivalent ci

 9.3. Size:428K  jiangsu
tsc143ennd03.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC143ENND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors (se

 9.4. Size:390K  jiangsu
tsc143tnnd03.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC143TNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. COLLECTOR without connecting external input

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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