Справочник транзисторов. TSC148DCM

 

Биполярный транзистор TSC148DCM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: TSC148DCM
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: TO263

 Аналоги (замена) для TSC148DCM

 

 

TSC148DCM Datasheet (PDF)

 7.1. Size:204K  taiwansemi
tsc148d.pdf

TSC148DCM TSC148DCM

TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base 400V BVCEO 2. Collector 3. Emitter 700V BVCBO 8A IC 1.5V @ IC / IB = 5A / 1A VCE(SAT) Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Becaus

 9.1. Size:112K  jiangsu
tsc1417.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 TSC1417 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-B

 9.2. Size:274K  jiangsu
tsc144ennd03.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC144ENND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit2. GND without connecting external input resistors (see equivalent ci

 9.3. Size:428K  jiangsu
tsc143ennd03.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC143ENND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors (se

 9.4. Size:390K  jiangsu
tsc143tnnd03.pdf

TSC148DCM

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC143TNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. COLLECTOR without connecting external input

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top