TSC148DCM Datasheet, Equivalent, Cross Reference Search
Type Designator: TSC148DCM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO263
TSC148DCM Transistor Equivalent Substitute - Cross-Reference Search
TSC148DCM Datasheet (PDF)
tsc148d.pdf
TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base 400V BVCEO 2. Collector 3. Emitter 700V BVCBO 8A IC 1.5V @ IC / IB = 5A / 1A VCE(SAT) Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Becaus
tsc1417.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 TSC1417 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-B
tsc144ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC144ENND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit2. GND without connecting external input resistors (see equivalent ci
tsc143ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC143ENND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors (se
tsc143tnnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC143TNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. COLLECTOR without connecting external input
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
