NE02112 Todos los transistores

 

NE02112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NE02112
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.7 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.07 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4500 MHz
   Capacitancia de salida (Cc): 0.6 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO206AF

 Búsqueda de reemplazo de transistor bipolar NE02112

 

NE02112 Datasheet (PDF)

 ..1. Size:1108K  nec
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NE02112

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 9.1. Size:1108K  nec
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NE02112

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 9.2. Size:171K  nec
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NE02112

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

 9.3. Size:178K  nec
ne021 series.pdf pdf_icon

NE02112

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

Otros transistores... TP9012NND03 , TP9013NND03 , TP9014NND03 , TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , S9014 , NE02132 , NE02133 , NE02135 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y .

History: BD370D-6 | 2SD1543 | BCW31CSM | NE02132 | TSB147 | 2SC3874 | KTC9016S

 

 
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