NE02112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NE02112
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.7 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.07 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 4500 MHz
   Capacitancia de salida (Cc): 0.6 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO206AF

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NE02112 Datasheet (PDF)

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ne02112.pdf

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ne02133.pdf

9.2. Size:171K nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

9.3. Size:178K nec
ne021 series.pdf