All Transistors. NE02112 Datasheet

 

NE02112 Datasheet and Replacement


   Type Designator: NE02112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.7 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4500 MHz
   Collector Capacitance (Cc): 0.6 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO206AF

 NE02112 Transistor Equivalent Substitute - Cross-Reference Search

   

NE02112 Datasheet (PDF)

 ..1. Size:1108K  nec
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NE02112

Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Li... See More ⇒

 9.1. Size:1108K  nec
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NE02112

Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Li... See More ⇒

 9.2. Size:171K  nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf pdf_icon

NE02112

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒

 9.3. Size:178K  nec
ne021 series.pdf pdf_icon

NE02112

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒

Datasheet: TP9012NND03 , TP9013NND03 , TP9014NND03 , TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , S9014 , NE02132 , NE02133 , NE02135 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y .

Keywords - NE02112 transistor datasheet

 NE02112 cross reference
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