NE02112 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

NE02112 Datasheet. Specs and Replacement

Type Designator: NE02112 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.7 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO206AF

NE02112 Substitution

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NE02112 datasheet

..1. Size:1108K nec

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Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Library Service Download from www.ICminer.com Electronic-Li... See More ⇒

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2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf pdf_icon

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒

9.3. Size:178K nec

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