NE02132 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NE02132
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4500 MHz
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO92
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NE02132 Datasheet (PDF)
ne02132.pdf
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ne02133.pdf
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2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a
ne02135.pdf
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Otros transistores... TP9013NND03 , TP9014NND03 , TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , NE02112 , BC327 , NE02133 , NE02135 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y , NZT44H8 .
History: 2SB736
History: 2SB736
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