All Transistors. NE02132 Datasheet

 

NE02132 Datasheet and Replacement


   Type Designator: NE02132
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4500 MHz
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO92

 NE02132 Transistor Equivalent Substitute - Cross-Reference Search

   

NE02132 Datasheet (PDF)

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NE02132

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NE02132

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NE02132

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒

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NE02132

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Datasheet: TP9013NND03 , TP9014NND03 , TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , NE02112 , BC327 , NE02133 , NE02135 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y , NZT44H8 .

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