NUS5530MN Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NUS5530MN
Código: 5530
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.75 W
Tensión colector-base (Vcb): 55 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 85 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: DFN8
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NUS5530MN datasheet
nus5530mn.pdf
NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel FET with a http //onsemi.com PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. 1 8 Feat
nus5530mnr2g.pdf
NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel FET with a http //onsemi.com PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. 1 8 Feat
nus5531mt.pdf
NUS5531MT Main Switch Power MOSFET and Single Charging BJT -12 V, -6.2 A, Single P-Channel FET with http //onsemi.com Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package MOSFET V(BR)DSS RDS(on) TYP ID MAX This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and 32 mW @ -4.5 V -12 V -6.2 A optimizing charging
Otros transistores... NE02103 , NE02107 , NE02112 , NE02132 , NE02133 , NE02135 , NE73430 , NE73435 , 2SC1815 , NXP3875G , NXP3875Y , NZT44H8 , NZT45H8 , N0501S , NJD1718T4G , NJD2873T4G , NJD35N04G .
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