NUS5530MN Datasheet, Equivalent, Cross Reference Search
Type Designator: NUS5530MN
SMD Transistor Code: 5530
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 2.75 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: DFN8
NUS5530MN Transistor Equivalent Substitute - Cross-Reference Search
NUS5530MN Datasheet (PDF)
nus5530mn.pdf
NUS5530MNIntegrated Power MOSFETwith PNP Low VCE(sat)Switching TransistorThis integrated device represents a new level of safety andboard-space reduction by combining the 20 V P-Channel FET with ahttp://onsemi.comPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredportable electronics. 1 8Feat
nus5530mnr2g.pdf
NUS5530MNIntegrated Power MOSFETwith PNP Low VCE(sat)Switching TransistorThis integrated device represents a new level of safety andboard-space reduction by combining the 20 V P-Channel FET with ahttp://onsemi.comPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredportable electronics. 1 8Feat
nus5531mt.pdf
NUS5531MTMain Switch PowerMOSFET and SingleCharging BJT-12 V, -6.2 A, Single P-Channel FET withhttp://onsemi.comSingle PNP low Vce(sat) Transistor,3x3 mm WDFN PackageMOSFETV(BR)DSS RDS(on) TYP ID MAXThis device integrates one high performance power MOSFET andone low Vce(sat) transistor, greatly reducing the layout space and 32 mW @ -4.5 V-12 V -6.2 Aoptimizing charging
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
