NUS5530MN Datasheet. Specs and Replacement
Type Designator: NUS5530MN 📄📄
SMD Transistor Code: 5530
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.75 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 85 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: DFN8
NUS5530MN Substitution
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NUS5530MN datasheet
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NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel FET with a http //onsemi.com PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. 1 8 Feat... See More ⇒
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Detailed specifications: NE02103, NE02107, NE02112, NE02132, NE02133, NE02135, NE73430, NE73435, 2SC1815, NXP3875G, NXP3875Y, NZT44H8, NZT45H8, N0501S, NJD1718T4G, NJD2873T4G, NJD35N04G
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