NJD1718T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJD1718T4G
Código: 1718G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 33 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar NJD1718T4G
NJD1718T4G Datasheet (PDF)
njd1718t4g.pdf
NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl
njvnjd1718t4g.pdf
NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl
njd1718.pdf
isc Silicon PNP Power Transistor NJD1718DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.5V(Max)( I = -1A; I = -0.05A)CE(sat C BHigh Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: CV9790O
History: CV9790O
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050