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NJD1718T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJD1718T4G
   Código: 1718G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 33 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar NJD1718T4G

 

NJD1718T4G Datasheet (PDF)

 ..1. Size:112K  onsemi
 njd1718t4g.pdf

NJD1718T4G NJD1718T4G

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

 0.1. Size:112K  onsemi
 njvnjd1718t4g.pdf

NJD1718T4G NJD1718T4G

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

 7.1. Size:217K  inchange semiconductor
 njd1718.pdf

NJD1718T4G NJD1718T4G

isc Silicon PNP Power Transistor NJD1718DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.5V(Max)( I = -1A; I = -0.05A)CE(sat C BHigh Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

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