NJD1718T4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJD1718T4G
SMD Transistor Code: 1718G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 33 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO252
NJD1718T4G Transistor Equivalent Substitute - Cross-Reference Search
NJD1718T4G Datasheet (PDF)
njd1718t4g.pdf
NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl
njvnjd1718t4g.pdf
NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl
njd1718.pdf
isc Silicon PNP Power Transistor NJD1718DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.5V(Max)( I = -1A; I = -0.05A)CE(sat C BHigh Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
