NJD1718T4G Datasheet. Specs and Replacement
Type Designator: NJD1718T4G 📄📄
SMD Transistor Code: 1718G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 33 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO252
NJD1718T4G Substitution
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NJD1718T4G datasheet
NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl... See More ⇒
NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl... See More ⇒
isc Silicon PNP Power Transistor NJD1718 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= -0.5V(Max)( I = -1A; I = -0.05A) CE(sat C B High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM... See More ⇒
Detailed specifications: NE73430, NE73435, NUS5530MN, NXP3875G, NXP3875Y, NZT44H8, NZT45H8, N0501S, TIP35C, NJD2873T4G, NJD35N04G, NS2029M3T5G, NSVT30010MXV6T1G, NSVT3904DP6T5G, NSVT3904DXV6T1G, NSVT3946DP6T5G, NSVT3946DXV6T1G
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