NJD2873T4G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJD2873T4G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12.5
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 65
MHz
Capacitancia de salida (Cc): 80
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de transistor bipolar NJD2873T4G
NJD2873T4G
Datasheet (PDF)
..1. Size:108K onsemi
njd2873t4g.pdf 
NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N
0.1. Size:108K onsemi
njvnjd2873t4g.pdf
NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N
5.1. Size:93K onsemi
njd2873t4.pdf
NJD2873T4GPlastic Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.http://onsemi.comFeatures High DC Current Gain - SILICONhFE = 120 (Min) @ IC = 500 mAPOWER TRANSISTORS= 40 (Min) @ IC = 2 A2 AMPERES Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A50 VOLTS High
7.1. Size:66K onsemi
njd2873.pdf
NJD2873Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.www.onsemi.comFeatures High DC Current Gain SILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Current-Gain - Bandwidth Product2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Othe
7.2. Size:215K inchange semiconductor
njd2873.pdf
isc Silicon NPN Power Transistor NJD2873DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.3V(Max)( I = 1A; I = 50mA)CE(sat C BDC Current Gain -h = 120(Min)@ I = 0.5AFE CHigh Current-GainBandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier applications.A
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
