NJD2873T4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJD2873T4G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO252
NJD2873T4G Transistor Equivalent Substitute - Cross-Reference Search
NJD2873T4G Datasheet (PDF)
njd2873t4g.pdf
NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N
njvnjd2873t4g.pdf
NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N
njd2873t4.pdf
NJD2873T4GPlastic Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.http://onsemi.comFeatures High DC Current Gain - SILICONhFE = 120 (Min) @ IC = 500 mAPOWER TRANSISTORS= 40 (Min) @ IC = 2 A2 AMPERES Low Collector-Emitter Saturation Voltage -VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A50 VOLTS High
njd2873.pdf
NJD2873Power TransistorsNPN Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier applications.www.onsemi.comFeatures High DC Current Gain SILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Current-Gain - Bandwidth Product2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Othe
njd2873.pdf
isc Silicon NPN Power Transistor NJD2873DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.3V(Max)( I = 1A; I = 50mA)CE(sat C BDC Current Gain -h = 120(Min)@ I = 0.5AFE CHigh Current-GainBandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-gain audio amplifier applications.A
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
