All Transistors. NJD2873T4G Datasheet

 

NJD2873T4G Datasheet and Replacement


   Type Designator: NJD2873T4G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 65 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO252

 NJD2873T4G Transistor Equivalent Substitute - Cross-Reference Search

   

NJD2873T4G Datasheet (PDF)

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NJD2873T4G

NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N... See More ⇒

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NJD2873T4G

NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N... See More ⇒

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NJD2873T4G

NJD2873T4G Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier applications. http //onsemi.com Features High DC Current Gain - SILICON hFE = 120 (Min) @ IC = 500 mA POWER TRANSISTORS = 40 (Min) @ IC = 2 A 2 AMPERES Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A 50 VOLTS High... See More ⇒

 7.1. Size:66K  onsemi
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NJD2873T4G

NJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier applications. www.onsemi.com Features High DC Current Gain SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Current-Gain - Bandwidth Product 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Othe... See More ⇒

Datasheet: NE73435 , NUS5530MN , NXP3875G , NXP3875Y , NZT44H8 , NZT45H8 , N0501S , NJD1718T4G , BD135 , NJD35N04G , NS2029M3T5G , NSVT30010MXV6T1G , NSVT3904DP6T5G , NSVT3904DXV6T1G , NSVT3946DP6T5G , NSVT3946DXV6T1G , NSVT45010MW6T1G .

History: 2SD1681T | NK1133 | 2SD1906S | ESM5038 | 2SD2044 | 2SD1691Y | 2SD1615A

Keywords - NJD2873T4G transistor datasheet

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