NS2029M3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NS2029M3T5G
Código: 9F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.27 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT723
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NS2029M3T5G Datasheet (PDF)
ns2029m3t5g.pdf
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NS2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium. Reduces Board Space High hFE, 210 - 460 (Typical)PNP GENERAL Low VCE(sat),
ns2029m3.pdf
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NS2029M3PNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardwww.onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typical)
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