NS2029M3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NS2029M3T5G

Código: 9F

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.27 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 3.5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT723

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NS2029M3T5G datasheet

 ..1. Size:69K  onsemi
 ns2029m3t5g.pdf pdf_icon

NS2029M3T5G

NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210 - 460 (Typical) PNP GENERAL Low VCE(sat),

 6.1. Size:116K  onsemi
 ns2029m3.pdf pdf_icon

NS2029M3T5G

NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical)

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