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NS2029M3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NS2029M3T5G
   Código: 9F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.27 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT723
 

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NS2029M3T5G Datasheet (PDF)

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NS2029M3T5G

NS2029M3T5GPNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardhttp://onsemi.comspace is at a premium. Reduces Board Space High hFE, 210 - 460 (Typical)PNP GENERAL Low VCE(sat),

 6.1. Size:116K  onsemi
 ns2029m3.pdf pdf_icon

NS2029M3T5G

NS2029M3PNP Silicon GeneralPurpose Amplifier TransistorThis PNP transistor is designed for general purpose amplifierapplications. This device is housed in the SOT-723 package which isdesigned for low power surface mount applications, where boardwww.onsemi.comspace is at a premium.FeaturesPNP GENERAL Reduces Board SpacePURPOSE AMPLIFIER High hFE, 210-460 (Typical)

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History: SK3247

 

 
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