NS2029M3T5G Datasheet. Specs and Replacement
Type Designator: NS2029M3T5G 📄📄
SMD Transistor Code: 9F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT723
NS2029M3T5G Substitution
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NS2029M3T5G datasheet
NS2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board http //onsemi.com space is at a premium. Reduces Board Space High hFE, 210 - 460 (Typical) PNP GENERAL Low VCE(sat), ... See More ⇒
NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High hFE, 210-460 (Typical) ... See More ⇒
Detailed specifications: NXP3875G, NXP3875Y, NZT44H8, NZT45H8, N0501S, NJD1718T4G, NJD2873T4G, NJD35N04G, BC558, NSVT30010MXV6T1G, NSVT3904DP6T5G, NSVT3904DXV6T1G, NSVT3946DP6T5G, NSVT3946DXV6T1G, NSVT45010MW6T1G, NSVT45010MW6T3G, NSVT45011MW6T3G
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