NSVT65010MW6T1G Todos los transistores

 

NSVT65010MW6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSVT65010MW6T1G
   Código: 4G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 65 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOT363
 

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NSVT65010MW6T1G Datasheet (PDF)

 0.1. Size:70K  onsemi
 nsvt65010mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65010MW6Dual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,6Sense and Balanced Amplifiers

 6.1. Size:70K  onsemi
 nsvt65011mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65011MW6Dual Matched GeneralPurpose TransistorNPN Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifiers; M

Otros transistores... NSVT3904DP6T5G , NSVT3904DXV6T1G , NSVT3946DP6T5G , NSVT3946DXV6T1G , NSVT45010MW6T1G , NSVT45010MW6T3G , NSVT45011MW6T3G , NSVT489AMT1G , 13005 , NSVT65011MW6T1G , NJL0281DG , NJL0302DG , NJL1302DG , NJL3281DG , NJL4281DG , NJL4302DG , NJT4030PT1G .

History: GES2484R

 

 
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