NSVT65010MW6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSVT65010MW6T1G

Código: 4G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.38 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 220

Encapsulados: SOT363

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NSVT65010MW6T1G datasheet

 0.1. Size:70K  onsemi
 nsvt65010mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65010MW6 Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra-small SOT-363 package www.onsemi.com ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, 6 Sense and Balanced Amplifiers

 6.1. Size:70K  onsemi
 nsvt65011mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65011MW6 Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra-small SOT-363 package www.onsemi.com ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; M

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