NSVT65010MW6T1G Datasheet. Specs and Replacement

Type Designator: NSVT65010MW6T1G  📄📄 

SMD Transistor Code: 4G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.38 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 220

Noise Figure, dB: -

Package: SOT363

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NSVT65010MW6T1G datasheet

 0.1. Size:70K  onsemi

 nsvt65010mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65010MW6 Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra-small SOT-363 package www.onsemi.com ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, 6 Sense and Balanced Amplifiers... See More ⇒

 6.1. Size:70K  onsemi

 nsvt65011mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65011MW6 Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra-small SOT-363 package www.onsemi.com ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; M... See More ⇒

Detailed specifications: NSVT3904DP6T5G, NSVT3904DXV6T1G, NSVT3946DP6T5G, NSVT3946DXV6T1G, NSVT45010MW6T1G, NSVT45010MW6T3G, NSVT45011MW6T3G, NSVT489AMT1G, C3198, NSVT65011MW6T1G, NJL0281DG, NJL0302DG, NJL1302DG, NJL3281DG, NJL4281DG, NJL4302DG, NJT4030PT1G

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