NSVT65010MW6T1G Datasheet and Replacement
Type Designator: NSVT65010MW6T1G
SMD Transistor Code: 4G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 220
Noise Figure, dB: -
Package: SOT363
NSVT65010MW6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSVT65010MW6T1G Datasheet (PDF)
nsvt65010mw6t1g.pdf
NST65010MW6 Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra-small SOT-363 package www.onsemi.com ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, 6 Sense and Balanced Amplifiers... See More ⇒
nsvt65011mw6t1g.pdf
NST65011MW6 Dual Matched General Purpose Transistor NPN Matched Pair These transistors are housed in an ultra-small SOT-363 package www.onsemi.com ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; M... See More ⇒
Datasheet: NSVT3904DP6T5G , NSVT3904DXV6T1G , NSVT3946DP6T5G , NSVT3946DXV6T1G , NSVT45010MW6T1G , NSVT45010MW6T3G , NSVT45011MW6T3G , NSVT489AMT1G , C3198 , NSVT65011MW6T1G , NJL0281DG , NJL0302DG , NJL1302DG , NJL3281DG , NJL4281DG , NJL4302DG , NJT4030PT1G .
History: QSL11 | KRA106M | KRA722E | KRA727E | QM5HG-24 | QSX3 | QS6Z5
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History: QSL11 | KRA106M | KRA722E | KRA727E | QM5HG-24 | QSX3 | QS6Z5
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