All Transistors. NSVT65010MW6T1G Datasheet

 

NSVT65010MW6T1G Datasheet and Replacement


   Type Designator: NSVT65010MW6T1G
   SMD Transistor Code: 4G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOT363
 

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NSVT65010MW6T1G Datasheet (PDF)

 0.1. Size:70K  onsemi
 nsvt65010mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65010MW6Dual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,6Sense and Balanced Amplifiers

 6.1. Size:70K  onsemi
 nsvt65011mw6t1g.pdf pdf_icon

NSVT65010MW6T1G

NST65011MW6Dual Matched GeneralPurpose TransistorNPN Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifiers; M

Datasheet: NSVT3904DP6T5G , NSVT3904DXV6T1G , NSVT3946DP6T5G , NSVT3946DXV6T1G , NSVT45010MW6T1G , NSVT45010MW6T3G , NSVT45011MW6T3G , NSVT489AMT1G , 13005 , NSVT65011MW6T1G , NJL0281DG , NJL0302DG , NJL1302DG , NJL3281DG , NJL4281DG , NJL4302DG , NJT4030PT1G .

History: 2SC4232 | 2SC382 | NSM80101MT1G | MMBT8099L | ECG101 | 2SC2956 | 2SD1733

Keywords - NSVT65010MW6T1G transistor datasheet

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