NSL12AWT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSL12AWT1G

Código: 11

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.45 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT363

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NSL12AWT1G datasheet

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 nsl12awt1g.pdf pdf_icon

NSL12AWT1G

NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http //onsemi.com Features High Current Capability (3 A) 12 VOLTS High Power Handling (Up to 650 mW) 3.0 AMPS Low VCE(s) (170 mV Typical @ 1 A) Small Size PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 1

 7.1. Size:125K  onsemi
 nsl12aw-d.pdf pdf_icon

NSL12AWT1G

NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http //onsemi.com Features High Current Capability (3 A) 12 VOLTS High Power Handling (Up to 650 mW) 3.0 AMPS Low VCE(s) (170 mV Typical @ 1 A) Small Size PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 1

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