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NSL12AWT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSL12AWT1G
   Código: 11
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.45 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT363
 

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NSL12AWT1G Datasheet (PDF)

 ..1. Size:125K  onsemi
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NSL12AWT1G

NSL12AWT1GHigh Current Surface MountPNP Silicon Low VCE(sat)Transistor for BatteryOperated Applicationshttp://onsemi.comFeatures High Current Capability (3 A)12 VOLTS High Power Handling (Up to 650 mW)3.0 AMPS Low VCE(s) (170 mV Typical @ 1 A) Small Size PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR1

 7.1. Size:125K  onsemi
 nsl12aw-d.pdf pdf_icon

NSL12AWT1G

NSL12AWT1GHigh Current Surface MountPNP Silicon Low VCE(sat)Transistor for BatteryOperated Applicationshttp://onsemi.comFeatures High Current Capability (3 A)12 VOLTS High Power Handling (Up to 650 mW)3.0 AMPS Low VCE(s) (170 mV Typical @ 1 A) Small Size PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR1

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History: NKT240

 

 
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