NSL12AWT1G Specs and Replacement
Type Designator: NSL12AWT1G
SMD Transistor Code: 11
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT363
NSL12AWT1G Substitution
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NSL12AWT1G datasheet
NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http //onsemi.com Features High Current Capability (3 A) 12 VOLTS High Power Handling (Up to 650 mW) 3.0 AMPS Low VCE(s) (170 mV Typical @ 1 A) Small Size PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 1... See More ⇒
NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications http //onsemi.com Features High Current Capability (3 A) 12 VOLTS High Power Handling (Up to 650 mW) 3.0 AMPS Low VCE(s) (170 mV Typical @ 1 A) Small Size PNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 1... See More ⇒
Detailed specifications: NJL1302DG, NJL3281DG, NJL4281DG, NJL4302DG, NJT4030PT1G, NJT4030PT3G, NJT4031N, NJT4031NT3G, NJW0281G, NSM4002MR6, NSM6056M, NSM80100MT1G, NSM80101MT1G, NSS12100M3, NSS12100UW3TCG, NSS12100XV6, NSS12200LT1G
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