NSS12100XV6 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS12100XV6  📄📄 

Código: VE

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.65 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT563

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NSS12100XV6 datasheet

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NSS12100XV6

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

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NSS12100XV6

NSS12100XV6T1G Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 Package ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPS where

 6.1. Size:63K  onsemi
 nss12100uw3tcg.pdf pdf_icon

NSS12100XV6

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.2. Size:82K  onsemi
 nss12100m3t5g.pdf pdf_icon

NSS12100XV6

NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

MOSTRAR MÁS

Otros transistores... NJT4031NT3G, NSL12AWT1G, NSM4002MR6, NSM6056M, NSM80100MT1G, NSM80101MT1G, NSS12100M3, NSS12100UW3TCG, BC556, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G, NSV1C200LT1G, NSV1C200MZ4T1G, NSV1C201LT1G