NSS12100XV6. Аналоги и основные параметры
Наименование производителя: NSS12100XV6
Маркировка: VE
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.65 W
Макcимально допустимое напряжение коллектор-база (Ucb): 12 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Ёмкость коллекторного перехода (Cc): 20 pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT563
Аналоги (замена) для NSS12100XV6
- подборⓘ биполярного транзистора по параметрам
NSS12100XV6 даташит
nss12100xv6.pdf
NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss12100xv6t1g.pdf
NSS12100XV6T1G Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 Package ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPS where
nss12100uw3tcg.pdf
NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss12100m3t5g.pdf
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Другие транзисторы: NJT4031NT3G, NSL12AWT1G, NSM4002MR6, NSM6056M, NSM80100MT1G, NSM80101MT1G, NSS12100M3, NSS12100UW3TCG, BC556, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G, NSV1C200LT1G, NSV1C200MZ4T1G, NSV1C201LT1G
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Список транзисторов
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