NSS12100XV6 - описание и поиск аналогов

 

NSS12100XV6. Аналоги и основные параметры

Наименование производителя: NSS12100XV6

Маркировка: VE

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.65 W

Макcимально допустимое напряжение коллектор-база (Ucb): 12 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 20 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT563

 Аналоги (замена) для NSS12100XV6

- подборⓘ биполярного транзистора по параметрам

 

NSS12100XV6 даташит

 ..1. Size:100K  onsemi
nss12100xv6.pdfpdf_icon

NSS12100XV6

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 0.1. Size:196K  onsemi
nss12100xv6t1g.pdfpdf_icon

NSS12100XV6

NSS12100XV6T1G Low VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 Package ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low http //onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPS where

 6.1. Size:63K  onsemi
nss12100uw3tcg.pdfpdf_icon

NSS12100XV6

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.2. Size:82K  onsemi
nss12100m3t5g.pdfpdf_icon

NSS12100XV6

NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Другие транзисторы: NJT4031NT3G, NSL12AWT1G, NSM4002MR6, NSM6056M, NSM80100MT1G, NSM80101MT1G, NSS12100M3, NSS12100UW3TCG, BC556, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G, NSV1C200LT1G, NSV1C200MZ4T1G, NSV1C201LT1G

 

 

 

 

↑ Back to Top
.