NSS12100XV6 Datasheet, Equivalent, Cross Reference Search
Type Designator: NSS12100XV6
SMD Transistor Code: VE
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.65 W
Maximum Collector-Base Voltage |Vcb|: 12 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT563
NSS12100XV6 Transistor Equivalent Substitute - Cross-Reference Search
NSS12100XV6 Datasheet (PDF)
nss12100xv6.pdf
NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
nss12100xv6t1g.pdf
NSS12100XV6T1GLow VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPSwhere
nss12100uw3tcg.pdf
NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
nss12100m3t5g.pdf
NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
nss12100m3.pdf
NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
