NSV12100XV6T1G Todos los transistores

 

NSV12100XV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV12100XV6T1G
   Código: VE
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.65 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT563
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NSV12100XV6T1G Datasheet (PDF)

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 nsv12100xv6t1g.pdf pdf_icon

NSV12100XV6T1G

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.1. Size:66K  onsemi
 nsv12100uw3tcg.pdf pdf_icon

NSV12100XV6T1G

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

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History: ZTX302M | NSVF4009SG4

 

 
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