NSV12100XV6T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV12100XV6T1G  📄📄 

Código: VE

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.65 W

Tensión colector-base (Vcb): 12 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 20 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT563

  📄📄 Copiar 

 Búsqueda de reemplazo de NSV12100XV6T1G

- Selecciónⓘ de transistores por parámetros

 

NSV12100XV6T1G datasheet

 ..1. Size:100K  onsemi
 nsv12100xv6t1g.pdf pdf_icon

NSV12100XV6T1G

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

 6.1. Size:66K  onsemi
 nsv12100uw3tcg.pdf pdf_icon

NSV12100XV6T1G

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa

Otros transistores... NSM80101MT1G, NSS12100M3, NSS12100UW3TCG, NSS12100XV6, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, TIP142, NSV1C200LT1G, NSV1C200MZ4T1G, NSV1C201LT1G, NSV1C201MZ4T1G, NSV1C300ET4G, NSV1C301ET4G, NSV20101JT1G, NSV20200LT1G