NSV12100XV6T1G Datasheet. Specs and Replacement

Type Designator: NSV12100XV6T1G  📄📄 

SMD Transistor Code: VE

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.65 W

Maximum Collector-Base Voltage |Vcb|: 12 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT563

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NSV12100XV6T1G datasheet

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 nsv12100xv6t1g.pdf pdf_icon

NSV12100XV6T1G

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa... See More ⇒

 6.1. Size:66K  onsemi

 nsv12100uw3tcg.pdf pdf_icon

NSV12100XV6T1G

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa... See More ⇒

Detailed specifications: NSM80101MT1G, NSS12100M3, NSS12100UW3TCG, NSS12100XV6, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, TIP142, NSV1C200LT1G, NSV1C200MZ4T1G, NSV1C201LT1G, NSV1C201MZ4T1G, NSV1C300ET4G, NSV1C301ET4G, NSV20101JT1G, NSV20200LT1G

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