NSV1C200LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV1C200LT1G

Código: VL

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.71 W

Tensión colector-base (Vcb): 140 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Capacitancia de salida (Cc): 22 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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NSV1C200LT1G datasheet

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NSV1C200LT1G

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

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NSV1C200LT1G

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

 6.1. Size:109K  onsemi
nsv1c200mz4t1g.pdf pdf_icon

NSV1C200LT1G

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont

 6.2. Size:198K  onsemi
nss1c200mz4 nsv1c200mz4.pdf pdf_icon

NSV1C200LT1G

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef

Otros transistores... NSS12100M3, NSS12100UW3TCG, NSS12100XV6, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G, 2N2907, NSV1C200MZ4T1G, NSV1C201LT1G, NSV1C201MZ4T1G, NSV1C300ET4G, NSV1C301ET4G, NSV20101JT1G, NSV20200LT1G, NSV20201LT1G