NSV1C200LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSV1C200LT1G
SMD Transistor Code: VL
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.71 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT23
NSV1C200LT1G Transistor Equivalent Substitute - Cross-Reference Search
NSV1C200LT1G Datasheet (PDF)
nsv1c200lt1g.pdf
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