NSV20101JT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSV20101JT1G

Código: AA

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.26 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 350 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT490

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NSV20101JT1G datasheet

 ..1. Size:109K  onsemi
nsv20101jt1g.pdf pdf_icon

NSV20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdf pdf_icon

NSV20101JT1G

NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is

 9.1. Size:126K  onsemi
nsv20200lt1g.pdf pdf_icon

NSV20101JT1G

NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable

 9.2. Size:119K  onsemi
nsv20201lt1g.pdf pdf_icon

NSV20101JT1G

NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T

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