NSV20101JT1G Todos los transistores

 

NSV20101JT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV20101JT1G
   Código: AA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 350 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT490
 

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NSV20101JT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
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NSV20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdf pdf_icon

NSV20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 9.1. Size:126K  onsemi
nsv20200lt1g.pdf pdf_icon

NSV20101JT1G

NSS20200LT1G,NSV20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-20 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable

 9.2. Size:119K  onsemi
nsv20201lt1g.pdf pdf_icon

NSV20101JT1G

NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BSS42 | PBHV8118T | CX954D | MPQ5550R | DDTB133HC

 

 
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