All Transistors. NSV20101JT1G Datasheet

 

NSV20101JT1G Datasheet and Replacement


   Type Designator: NSV20101JT1G
   SMD Transistor Code: AA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 350 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT490
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NSV20101JT1G Datasheet (PDF)

 ..1. Size:109K  onsemi
nsv20101jt1g.pdf pdf_icon

NSV20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 5.1. Size:105K  onsemi
nss20101j nsv20101j.pdf pdf_icon

NSV20101JT1G

NSS20101J, NSV20101J20 V, 1.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is

 9.1. Size:126K  onsemi
nsv20200lt1g.pdf pdf_icon

NSV20101JT1G

NSS20200LT1G,NSV20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-20 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable

 9.2. Size:119K  onsemi
nsv20201lt1g.pdf pdf_icon

NSV20101JT1G

NSS20201LT1G,NSV20201LT1G20 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These20 VOLTS 4.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) T

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NSBA144EDXV6T5G | ECG95 | 3DA150C | R8066 | 2SD1376 | PBHV8118T | C8050C

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