NSV20101JT1G Datasheet and Replacement
Type Designator: NSV20101JT1G
SMD Transistor Code: AA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT490
NSV20101JT1G Transistor Equivalent Substitute - Cross-Reference Search
NSV20101JT1G Datasheet (PDF)
nsv20101jt1g.pdf
NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is... See More ⇒
nss20101j nsv20101j.pdf
NSS20101J, NSV20101J 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is... See More ⇒
nsv20200lt1g.pdf
NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These -20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable... See More ⇒
nsv20201lt1g.pdf
NSS20201LT1G, NSV20201LT1G 20 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 20 VOLTS 4.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) T... See More ⇒
Datasheet: NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G , NSV1C200MZ4T1G , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , NSV1C301ET4G , MJE350 , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G , NJV4030PT1G , NJV4030PT3G , NJV4031NT1G , NJV4031NT3G , NJVBUB323ZT4G .
History: KRA524T | R340 | QSH29 | SMBT3906L3 | R8066 | ACY13 | NTE2407
Keywords - NSV20101JT1G transistor datasheet
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History: KRA524T | R340 | QSH29 | SMBT3906L3 | R8066 | ACY13 | NTE2407
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