NJW21194G Todos los transistores

 

NJW21194G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJW21194G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 500 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de transistor bipolar NJW21194G

 

NJW21194G Datasheet (PDF)

 ..1. Size:117K  onsemi
njw21193g njw21194g.pdf

NJW21194G NJW21194G

NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit

 ..2. Size:217K  inchange semiconductor
njw21194g.pdf

NJW21194G NJW21194G

isc Silicon NPN Power Transistor NJW21194GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 6.1. Size:90K  onsemi
njw21193 njw21194.pdf

NJW21194G NJW21194G

NJW21193G (PNP)NJW21194G (NPN)Preferred DevicesSilicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE

 7.1. Size:121K  onsemi
njw21193g-94g.pdf

NJW21194G NJW21194G

NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit

 7.2. Size:203K  inchange semiconductor
njw21193g.pdf

NJW21194G NJW21194G

isc Silicon PNP Power Transistor NJW21193GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top

 


NJW21194G
  NJW21194G
  NJW21194G
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top