NJW21194G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJW21194G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 500 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3P
NJW21194G Transistor Equivalent Substitute - Cross-Reference Search
NJW21194G Datasheet (PDF)
njw21193g njw21194g.pdf
NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit
njw21194g.pdf
NJW21194GTransistor Silicon NPN Triple Diffused TypePower Amplifier Applications Complementary to NJW21193G High collector voltage:VCEO=250V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote1: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) m
njw21194g.pdf
isc Silicon NPN Power Transistor NJW21194GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
njw21193 njw21194.pdf
NJW21193G (PNP)NJW21194G (NPN)Preferred DevicesSilicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized16 AMPERES High DC Current Gain - COMPLEMENTARY SILICONhFE
njw21193g-94g.pdf
NJW21193G (PNP)NJW21194G (NPN)Silicon Power TransistorsThe NJW21193G and NJW21194G utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMPERES High DC Current GainCOMPLEMENTARY SILICON Excellent Gain Linearit
njw21193g.pdf
NJW21193GTransistor Silicon PNP Epitaxial TypePower Amplifier Applications Complementary to NJW21194G High collector voltage:VCEO=-250V (min) Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cau
njw21193g.pdf
isc Silicon PNP Power Transistor NJW21193GDESCRIPTIONLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
