NJW44H11G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJW44H11G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 85 MHz

Capacitancia de salida (Cc): 65 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO3P

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NJW44H11G datasheet

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 njw44h11g.pdf pdf_icon

NJW44H11G

NJW44H11G 80 V NPN, 10 A Power Transistor These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters http //onsemi.com and power amplifiers. Features 80 VOLT, 10 AMPS Fast Switching Speeds NPN POWER TRANSISTORS High Frequency

 6.1. Size:99K  onsemi
 njw44h11-g.pdf pdf_icon

NJW44H11G

NJW44H11G 80 V NPN, 10 A Power Transistor These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters http //onsemi.com and power amplifiers. Features 80 VOLT, 10 AMPS Fast Switching Speeds NPN POWER TRANSISTORS High Frequency

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