NJW44H11G
Datasheet, Equivalent, Cross Reference Search
Type Designator: NJW44H11G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120
W
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 85
MHz
Collector Capacitance (Cc): 65
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO3P
NJW44H11G
Transistor Equivalent Substitute - Cross-Reference Search
NJW44H11G
Datasheet (PDF)
..1. Size:157K onsemi
njw44h11g.pdf
NJW44H11G80 V NPN, 10 A Power TransistorThese series of plastic, silicon NPN power transistors can be used asgeneral purpose power amplification and switching such as output ordriver stages in applications such as switching regulators, convertershttp://onsemi.comand power amplifiers.Features80 VOLT, 10 AMPS Fast Switching SpeedsNPN POWER TRANSISTORS High Frequency
6.1. Size:99K onsemi
njw44h11-g.pdf
NJW44H11G80 V NPN, 10 A Power TransistorThese series of plastic, silicon NPN power transistors can be used asgeneral purpose power amplification and switching such as output ordriver stages in applications such as switching regulators, convertershttp://onsemi.comand power amplifiers.Features80 VOLT, 10 AMPS Fast Switching SpeedsNPN POWER TRANSISTORS High Frequency
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