NSS40300DDR2G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40300DDR2G
Código: 40300
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.58 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hFE): 150
Encapsulados: SOIC8
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NSS40300DDR2G datasheet
nss40300ddr2g.pdf
NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nss40300d.pdf
NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nss40300md.pdf
NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http //onsemi.com voltage. 40 VOLTS Typical appl
nss40300mz4.pdf
NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic
Otros transistores... NSS20300MR6, NSS20500UW3T2G, NSS20500UW3TBG, NSS20501UW3T2G, NSS20501UW3TBG, NSS20601CF8T1G, NSS40200LT1G, NSS40201LT1G, TIP3055, NSS40300MDR2G, NJVMJD112G, NJVMJD112T4G, NJVMJD117T4G, NJVMJD122T4G, NJVMJD127T4G, NJVMJD128T4G, NJVMJD148T4G
History: NST847BDP6 | KRA152F | THA92TTD03 | BCW61FN
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