NSS40300DDR2G Specs and Replacement
Type Designator: NSS40300DDR2G
SMD Transistor Code: 40300
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.58 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Package: SOIC8
NSS40300DDR2G Substitution
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NSS40300DDR2G datasheet
NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. ... See More ⇒
NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed http //onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. ... See More ⇒
NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low saturation voltage VCE(sat), high current gain and Base/Emitter turn on http //onsemi.com voltage. 40 VOLTS Typical appl... See More ⇒
NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation http //onsemi.com voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where PNP TRANSISTOR affordable effic... See More ⇒
Detailed specifications: NSS20300MR6, NSS20500UW3T2G, NSS20500UW3TBG, NSS20501UW3T2G, NSS20501UW3TBG, NSS20601CF8T1G, NSS40200LT1G, NSS40201LT1G, TIP3055, NSS40300MDR2G, NJVMJD112G, NJVMJD112T4G, NJVMJD117T4G, NJVMJD122T4G, NJVMJD127T4G, NJVMJD128T4G, NJVMJD148T4G
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History: 2SC646 | 2SC4471
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