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NSS40300MDR2G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS40300MDR2G
   Código: P40300
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.58 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 50 pF
   Ganancia de corriente contínua (hfe): 220
   Paquete / Cubierta: SOIC8
 

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NSS40300MDR2G Datasheet (PDF)

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NSS40300MDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 ..2. Size:219K  onsemi
 nss40300mdr2g nsv40300mdr2g.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 4.1. Size:106K  onsemi
 nss40300md.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl

 5.1. Size:159K  onsemi
 nss40300mz4.pdf pdf_icon

NSS40300MDR2G

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

MOSTRAR MÁS

Otros transistores... NSS20500UW3T2G , NSS20500UW3TBG , NSS20501UW3T2G , NSS20501UW3TBG , NSS20601CF8T1G , NSS40200LT1G , NSS40201LT1G , NSS40300DDR2G , A1941 , NJVMJD112G , NJVMJD112T4G , NJVMJD117T4G , NJVMJD122T4G , NJVMJD127T4G , NJVMJD128T4G , NJVMJD148T4G , NJVMJD210T4G .

 

 
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