All Transistors. NSS40300MDR2G Datasheet

 

NSS40300MDR2G Datasheet and Replacement


   Type Designator: NSS40300MDR2G
   SMD Transistor Code: P40300
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.58 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOIC8
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NSS40300MDR2G Datasheet (PDF)

 ..1. Size:132K  onsemi
 nss40300mdr2g.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 ..2. Size:219K  onsemi
 nss40300mdr2g nsv40300mdr2g.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 4.1. Size:106K  onsemi
 nss40300md.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl

 5.1. Size:159K  onsemi
 nss40300mz4.pdf pdf_icon

NSS40300MDR2G

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

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Keywords - NSS40300MDR2G transistor datasheet

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