All Transistors. NSS40300MDR2G Datasheet

 

NSS40300MDR2G Datasheet and Replacement


   Type Designator: NSS40300MDR2G
   SMD Transistor Code: P40300
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.58 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 220
   Noise Figure, dB: -
   Package: SOIC8
 

 NSS40300MDR2G Substitution

   - BJT ⓘ Cross-Reference Search

   

NSS40300MDR2G Datasheet (PDF)

 ..1. Size:132K  onsemi
 nss40300mdr2g.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 ..2. Size:219K  onsemi
 nss40300mdr2g nsv40300mdr2g.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A

 4.1. Size:106K  onsemi
 nss40300md.pdf pdf_icon

NSS40300MDR2G

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl

 5.1. Size:159K  onsemi
 nss40300mz4.pdf pdf_icon

NSS40300MDR2G

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic

SHOW MORE

Datasheet: NSS20500UW3T2G , NSS20500UW3TBG , NSS20501UW3T2G , NSS20501UW3TBG , NSS20601CF8T1G , NSS40200LT1G , NSS40201LT1G , NSS40300DDR2G , A1941 , NJVMJD112G , NJVMJD112T4G , NJVMJD117T4G , NJVMJD122T4G , NJVMJD127T4G , NJVMJD128T4G , NJVMJD148T4G , NJVMJD210T4G .

History: BC847UF

Keywords - NSS40300MDR2G transistor datasheet

 NSS40300MDR2G cross reference
 NSS40300MDR2G equivalent finder
 NSS40300MDR2G lookup
 NSS40300MDR2G substitution
 NSS40300MDR2G replacement

 

 
Back to Top

 


 
.