Биполярный транзистор NSS40300MDR2G Даташит. Аналоги
Наименование производителя: NSS40300MDR2G
Маркировка: P40300
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.58 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора: SOIC8
Аналог (замена) для NSS40300MDR2G
NSS40300MDR2G Datasheet (PDF)
nss40300mdr2g.pdf

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A
nss40300mdr2g nsv40300mdr2g.pdf

NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A
nss40300md.pdf

NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl
nss40300mz4.pdf

NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
Другие транзисторы... NSS20500UW3T2G , NSS20500UW3TBG , NSS20501UW3T2G , NSS20501UW3TBG , NSS20601CF8T1G , NSS40200LT1G , NSS40201LT1G , NSS40300DDR2G , A1941 , NJVMJD112G , NJVMJD112T4G , NJVMJD117T4G , NJVMJD122T4G , NJVMJD127T4G , NJVMJD128T4G , NJVMJD148T4G , NJVMJD210T4G .



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