NJVMJD3055T4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVMJD3055T4G

Código: 3055

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 2 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO252

 Búsqueda de reemplazo de NJVMJD3055T4G

- Selecciónⓘ de transistores por parámetros

 

NJVMJD3055T4G datasheet

 4.1. Size:128K  onsemi
njvmjd2955 njvmjd3055.pdf pdf_icon

NJVMJD3055T4G

 7.2. Size:140K  onsemi
njvmjd31 njvmjd32.pdf pdf_icon

NJVMJD3055T4G

 7.3. Size:172K  onsemi
njvmjd340 njvmjd350.pdf pdf_icon

NJVMJD3055T4G

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

Otros transistores... NJVMJD122T4G, NJVMJD127T4G, NJVMJD128T4G, NJVMJD148T4G, NJVMJD210T4G, NJVMJD243T4G, NJVMJD253T4G, NJVMJD2955T4G, S9014, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, NJVMJD31T4G, NJVMJD32CG, NJVMJD32CT4G, NJVMJD32T4G, NJVMJD340T4G