NJVMJD3055T4G Specs and Replacement

Type Designator: NJVMJD3055T4G

SMD Transistor Code: 3055

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 2 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO252

 NJVMJD3055T4G Substitution

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NJVMJD3055T4G datasheet

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NJVMJD3055T4G

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S... See More ⇒

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Detailed specifications: NJVMJD122T4G, NJVMJD127T4G, NJVMJD128T4G, NJVMJD148T4G, NJVMJD210T4G, NJVMJD243T4G, NJVMJD253T4G, NJVMJD2955T4G, S9014, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, NJVMJD31T4G, NJVMJD32CG, NJVMJD32CT4G, NJVMJD32T4G, NJVMJD340T4G

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