NSBA114TDXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSBA114TDXV6T1G

Código: 0E

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 160

Encapsulados: SOT563

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NSBA114TDXV6T1G datasheet

 1.1. Size:146K  onsemi
 nsba114tdxv6t5g.pdf pdf_icon

NSBA114TDXV6T1G

MUN5115DW1, NSBA114TDXV6, NSBA114TDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

 1.2. Size:102K  onsemi
 nsba114tdxv6t.pdf pdf_icon

NSBA114TDXV6T1G

NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network (3) (2) (1) The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digi

 5.1. Size:99K  onsemi
 nsba114tdp6t5g.pdf pdf_icon

NSBA114TDXV6T1G

NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor (3) (2) (1) contains a single transistor with a monolithic bias network consistin

MOSTRAR MÁS

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