NSBA114TDXV6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSBA114TDXV6T1G
SMD Transistor Code: 0E
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT563
NSBA114TDXV6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSBA114TDXV6T1G Datasheet (PDF)
nsba114tdxv6t5g.pdf
MUN5115DW1,NSBA114TDXV6,NSBA114TDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 8 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with
nsba114tdxv6t.pdf
NSBA114EDXV6T1,NSBA114EDXV6T5 SERIESPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digi
nsba114tdp6t5g.pdf
NSBA114EDP6T5G SeriesPreferred DevicesDual Digital Transistors(BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistor(3) (2) (1)contains a single transistor with a monolithic bias network consistin
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
