NST30010MXV6T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NST30010MXV6T1G

Código: UU

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 420

Encapsulados: SOT563

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NST30010MXV6T1G datasheet

 0.1. Size:102K  onsemi
 nst30010mxv6t1g.pdf pdf_icon

NST30010MXV6T1G

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a

 0.2. Size:172K  onsemi
 nst30010mxv6t1g nsvt30010mxv6t1g.pdf pdf_icon

NST30010MXV6T1G

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a

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