NST30010MXV6T1G Specs and Replacement

Type Designator: NST30010MXV6T1G

SMD Transistor Code: UU

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SOT563

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NST30010MXV6T1G datasheet

 0.1. Size:102K  onsemi

 nst30010mxv6t1g.pdf pdf_icon

NST30010MXV6T1G

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a... See More ⇒

 0.2. Size:172K  onsemi

 nst30010mxv6t1g nsvt30010mxv6t1g.pdf pdf_icon

NST30010MXV6T1G

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a... See More ⇒

Detailed specifications: NSBA114EF3T5G, NSBA114TDP6T5G, NSBA114TDXV6T1G, NSBA114TDXV6T5G, NSBA114TF3T5G, NSBA114YDP6T5G, NSBA114YDXV6T1G, NSBA114YF3T5G, D209L, NST3904DP6T5G, NST3904DXV6T1G, NST3904DXV6T5G, NST3906DP6T5G, NST3906DXV6T1G, NST3946DP6T5G, NST3946DXV6T1G, NST3946DXV6T5G

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