All Transistors. NST30010MXV6T1G Datasheet

 

NST30010MXV6T1G Datasheet and Replacement


   Type Designator: NST30010MXV6T1G
   SMD Transistor Code: UU
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT563
 

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NST30010MXV6T1G Datasheet (PDF)

 0.1. Size:102K  onsemi
 nst30010mxv6t1g.pdf pdf_icon

NST30010MXV6T1G

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

 0.2. Size:172K  onsemi
 nst30010mxv6t1g nsvt30010mxv6t1g.pdf pdf_icon

NST30010MXV6T1G

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

Datasheet: NSBA114EF3T5G , NSBA114TDP6T5G , NSBA114TDXV6T1G , NSBA114TDXV6T5G , NSBA114TF3T5G , NSBA114YDP6T5G , NSBA114YDXV6T1G , NSBA114YF3T5G , BC556 , NST3904DP6T5G , NST3904DXV6T1G , NST3904DXV6T5G , NST3906DP6T5G , NST3906DXV6T1G , NST3946DP6T5G , NST3946DXV6T1G , NST3946DXV6T5G .

History: 5610 | BUY91SM | BFQ57 | D45D1 | 2SC2080 | MMBT2219 | ACY22H

Keywords - NST30010MXV6T1G transistor datasheet

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