NSB1706DMW5T1G Todos los transistores

 

NSB1706DMW5T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSB1706DMW5T1G
   Código: U6
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.26 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT353
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NSB1706DMW5T1G Datasheet (PDF)

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NSB1706DMW5T1G

NSB1706DMW5T1GDual Bias ResistorTransistorNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors aredesigned to replace a single device and its

 1.1. Size:117K  onsemi
 nsb1706dmw5t1-d.pdf pdf_icon

NSB1706DMW5T1G

NSB1706DMW5T1GDual Bias ResistorTransistorNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThe Bias Resistor Transistor (BRT) contains a single transistor withhttp://onsemi.coma monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors aredesigned to replace a single device and its

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History: BC848BL3 | PBSS305ND | BDX33BG | DTA143EUB | BC817-40 | D45VH4 | KT8225A

 

 
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